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IEEE Electron Device Letters Volume: 29  Issue: 5   Date: May. 2008


Table Of Contents

IEEE Electron Device Letters publication information ,Page(s): C2-C2

Changes to the Editorial Board ,Taur, Y.Page(s): 415-415

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
Riedel, G. J.; Pomeroy, J. W.; Hilton, K. P.; Maclean, J. O.; Wallis, D. J.; Uren, M. J.; Martin, T.; Kuball, M.Page(s): 416-418

Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm $g_{m}$ and 490 GHz $f_{T}$
Ha, W.; Shinohara, K.; Brar, B.Page(s): 419-421

Barrier-Layer Scaling of InAlN/GaN HEMTs
Medjdoub, F.; Alomari, M.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Py, M. A.; Grandjean, N.; Kohn, E.Page(s): 422-425

Phase-Noise Improvement of GaAs pHEMT K-Band Voltage-Controlled Oscillator Using Tunable Field-Plate Voltage Technology
Chiu, H.-C.; Wei, C.-C.; Cheng, C.-S.; Wu, Y.-F.Page(s): 426-429

Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $hbox{La}_{2}hbox{O}_{3}/hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High- $kappa$ Dielectrics and Si Channel ,Chang, S. Z.; Yu, H. Y.; Adelmann, C.;  Page(s): 430-433

Nonpolar Nonvolatile Resistive Switching in Cu Doped $hbox{ZrO}_{2}$
Guan, W.; Long, S.; Liu, Q.; Liu, M.; Wang, W.Page(s): 434-437

P-Channel Tri-Gate FinFETs Featuring $hbox{Ni}_{1 - y}hbox{Pt}_{y} hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance ,Lee, R. T.-P.; Tan, K.-M.; Lim, A. E.-J.; Liow, T.-Y.; Samudra, G. S.; Chi, D.-Z.; Yeo, Y.-C.Page(s): 438-441

Degradation Study of Organic Semiconductor Devices Under Electrical and Optical Stresses
Jassi, M.; Gurunath, R.; Sundar Kumar Iyer, S.Page(s): 442-444

Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations ,Wang, J.; Loh, W. Y.; Chua, K. T.; Zang, H.; Xiong, Y. Z.; Loh, T. H.; Yu, M. B Page(s): 445-448

A Physically Based Explicit $J$ – $V$ Model of a Solar Cell for Simple Design Calculations
Karmalkar, S.; Haneefa, S.Page(s): 449-451

A Stable Field-Emission Light Source With ZnO Nanoemitters ,Wei, L.; Zhang, X.; Wang, B.; Lou, C.; Zhu, Z Page(s): 452-455

Stable Electrical Operation of 6H–SiC JFETs and ICs for Thousands of Hours at 500 $^{circ}hbox{C}$
Neudeck, P. G.; Spry, D. J.; Chen, L.-Y.; Beheim, G. M.; Okojie, R. S.; Chang, C. W.; Meredith, R. D.; Ferrier  Page(s): 456-459

Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors ,Wong, H.-S.; Ang, K.-W.; Chan, L.; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S. G.; Samudra, G.; Yeo, Y.-C.Page(s): 460-463

Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration ,Koh, A. T.-Y.; Lee, R. T.-P.; Liu, F. Y.; Liow, T.-Y.; Tan, K. M.; Wang, X.; Samudra, G. S Page(s): 464-467

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes
Nayfeh, O. M.; ChlÉirighChleirigh, C. N.; Hoyt, J. L.; Antoniadis, D. A.Page(s): 468-470

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers ,Zhang, J.; Li, X.; Alexandrov, Page(s): 471-473

High-Performance Nanowire TFTs With Metal-Induced Lateral Crystallized Poly-Si Channels
Chang, C.-W.; Chen, S.-F.; Chang, C.-L.; Deng, C.-K.; Huang, J.-J.; Lei, T.-F.Page(s): 474-476

Dynamic Negative Bias Temperature Instability (NBTI) of Low-Temperature Polycrystalline Silicon (LTPS) Thin-Film Transistors
Liao, J. C.; Fang, Y. K.; Kao, C. H.; Cheng, C. Y.Page(s): 477-479

Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs Suthram, S.; Hussain, M. M.; Harris, H. R.; Smith, C.; Tseng, H.-H.; Jammy, R.; Thompson, S. E.Page(s): 480-482

Effect of Nitrogen on the Frequency Dependence of Dynamic NBTI-Induced Threshold-Voltage Shift of the Ultrathin Oxynitride Gate P-MOSFET ,Wang, S.; Ang, D. S.; Du, G. A.Page(s): 483-486

Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs ,Kang, C. Y.; Yang, J.-W.; Oh, J.; Choi, R.; Suh, Y. J.; Floresca,  Page(s): 487-490

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap
Sun, X.; Lu, Q.; Moroz, V.; Takeuchi, H.; Gebara, GPage(s): 491-493

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives
Durand, C.; Casset, F.; Renaux, P.; AbelÉAbele, N.; Legrand,Page(s): 494-496

Electron Transport Modeling for Junctions of Zigzag and Armchair Graphene Nanoribbons (GNRs)
Naeemi, A.; Meindl, J. D.Page(s): 497-499

Contact-Electrode Insensitive Rectifiers Based on Carbon Nanotube Network Transistors
Li, J.; Zhang, Z.-B.; Qiu, Z.; Zhang, S.-L.Page(s): 500-502

High Tolerance to Gate Misalignment in Low Voltage Gate-Underlap Double Gate MOSFETs
Kranti, A.; Armstrong, G. A.Page(s): 503-505

Performance Fluctuation of FinFETs With Schottky Barrier Source/Drain
Zhang, Z.; Lu, J.; Qiu, Z.; HellstrÖmHellstrom, P.-E.; ÖstlingOstling, M.; Zhang, S.-L.Page(s): 506-508

Investigation of Bulk Traps Enhanced Gate-Induced Leakage Current in Hf-Based MOSFETs
Liao, J. C.; Fang, Y.-K.; Hou, Y. T.; Tseng, W. H.; Hsu, P. F.; Lin, K. C.; Page(s): 509-511

SONOS-Type Flash Memory Cell With Metal $/hbox{Al}_{2}hbox{O}_{3}/ hbox{SiN}/hbox{Si}_{3}hbox{N}_{4}/hbox{Si}$ Structure for Low-Voltage High-Speed Program/Erase Operation
Shim, S. I.; Yeh, F. C.; Wang, X. W.; Ma, T. P.Page(s): 512-514

High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors
Majumdar, A.; Ren, Z.; Sleight, J. W.; Dobuzinsky, D.; Holt, J. R.; Venigalla, R.; Page(s): 515-517

Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell
Fu, J.; Singh, N.; Buddharaju, K. D.; Teo, S. H. G.; Shen, C.; Page(s): 518-521

A New Antifuse Cell With Programmable Contact for Advance CMOS Logic Circuits
Chen, M.; Huang, C.-E.; Tseng, Y.-H.; King, Y.-C.; Lin, C.-J.Page(s): 522-524

IEEE Electron Devices Society Meetings Calendar for 2008 (as of 04 April 2008) ,Page(s): 525-526

IEEE Electron Device Letters information for authors ,Page(s): 527-527

9th International Conference on Solid-State and Integrated-Circuit Technology ,Page(s): 528-528

2008 EDS Education Award Call for Nominations ,Page(s): 529-529

2008 IEEE Compound Semiconductor IC Symposium ,Page(s): 530-530

Leading the field since 1884 ,Page(s): 531-531