Table of Contents
IEEE Electron Device Letters publication information , Page(s): C2-C2
Low Turn-On Voltage and High-Current $hbox{InP}
Chen, S.-H.; Teng, K.-H.; Chen, H.-Y.; Wang, S.-Y.; Page(s): 655-657
Improvement of External Extraction Efficiency in GaN-Based LEDs by $ hbox Hsieh, M.-Y.; Wang, C.-Y.; Chen, L.-Y.; Lin, Page(s): 658-660
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance Zimmermann, T.; Deen, D.; Cao, Y.; Simon, J.; Fay, P.Page(s): 661-664
A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors Joh, J.; del Alamo, J. A.; Jimenez, J., Page(s): 665-667
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation Oka, T.; Nozawa, T., Page(s): 668-670
Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor
Lin, Y.-S.; Jiang, J.-J., Page(s): 671-673
Forming Gas Annealing Characteristics of Germanium-on-Insulator Substrates
Jin, H.-Y.; Cheung, N. W., Page(s): 674-676
Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors
Velasco-Velez, J. J.; Chaiyboun, A.; Wilbertz, C.; Scheinert , Page(s): 677-680
Improvement of Resistive Switching in $hbox{Cu}_{x} hbox{O}$ Using New RESET Mode Yin, M.; Zhou, P.; Lv, H. B.; Xu, J.; Song, Y. L.; Fu, X. F.; Page(s): 681-683
Electrical Properties of Amorphous Thin Film for RF MIM Capacitors Cho, K.-H.; Choi, C.-H.; Hong, K. P.; Choi, J.-Y.; Jeong, Page(s): 684-687
Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and of Flash Memory Pu, J.; Kim, S.-J.; Lee, S.-H.; Kim, Y.-S.; Kim, S.-T.; Choi, K.-J.; Page(s): 688-690
Fabrication and Characterization of Carbon Nanotubes Integrated on Field-Emission Diode Tsai, J. T. H.; Li, J. G. S. Page(s): 691-693
Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Lee, D.; Baek, S.; Ree, M.; Kim, O., Page(s): 694-697
Low-Temperature-Processed Inorganic Gate Dielectrics for Plastic-Substrate-Based Organic Field-Effect Transistors Tan, H. S.; Cahyadi, T.; Wan, Page(s): 698-700
A Single-Crystal-Silicon Bulk-Acoustic-Mode Microresonator Oscillator
Lee, J. E.-Y.; Bahreyni, B.; Zhu, Y.; Seshia, A. A., Page(s): 701-703
Novel Silicon¿Carbon Schottky Barrier Enhancement Layer for Dark-Current Suppression SOI MSM Photodetectors Ang, K.-W.; Zhu, S.-Y.;Page(s): 704-707
Novel NiGe MSM Photodetector Featuring Asymmetrical Schottky Barriers Using Sulfur Co-Implantation and Segregation Ang, K.-W.; Yu, M.-B.; Zhu, Page(s): 708-710
Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes
Huang, C.-Y.; Su, Y.-K.; Chen, Y.-C.; Tsai, P.-C.;Page(s): 711-713
Separate Absorption-Charge Multiplication Heterojunction Phototransistors With the Bandwidth Shi, J.-W.; Wu, Y.-S.; Hong, F.-C.; Chiu, W.-Y., Page(s): 714-717
A Novel Multiple-Gate Polycrystalline Silicon Nanowire Transistor Featuring an Inverse-T Gate Lin, H.-C.; Hsu, H.-H.; Su, C.-J.; Huang, T.-Y., Page(s): 718-720
ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay
Sun, J.; Mourey, D. A.; Zhao, D.; Park, S. K.; Nelson, S. F.;Page(s): 721-723
New n-Type $hbox{TiO}_{2}$ Transparent Active Channel TFTs Fabricated With a SolutionProcess Park, J.-W.; Yoo, S., Page(s): 724-727
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Sudow, M.; Nemati, H. M.; Thorsell, M.; Gustavsson, U, Page(s): 728-730
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