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IEEE Transaction on Electron Devices Volume: 55  Issue:7   Date: July 2008

Table of Contents

IEEE Transactions on Electron Devices publication information
Page(s): C2-C2

A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance Kim, T.-W.; Kim, D.-H.; Park, S.-D.; Shin, S. H.; Jo, S. J.; Song, Page(s): 1577-1584

Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures
Shigekawa, N.; Nishimura, K.; Yokoyama, H.; Hohkawa, K. , Page(s): 1585-1591

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
Faqir, M.; Verzellesi, G.; Meneghesso, G.; Zanoni, Page(s): 1592-1602

Methodology for Small-Signal Model Extraction of AlGaN HEMTs
Shealy, J. R.; Wang, J.; Brown, R. , Page(s): 1603-1613

Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb/s Data Transfer Kawano, M.; Takahashi, N.; Kurita, Y.; Soejima, Page(s): 1614-1620

Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and Stability Kuo, A.; Won, T. K.; Kanicki, J. , Page(s): 1621-1629

The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative- Maheta, V. D.; Olsen, C.; Ahmed, K.; Mahapatra, S. , Page(s): 1630-1638

Carrier Transportation Mechanism of the Structure With Silicon Surface Fluorine Implantation Wu, W. C.; Lai, C. S.; Wang, T. M.; Wang, J. C.; Page(s): 1639-1646

Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect Zhao, C. Z.; Zhang,  Page(s): 1647-1656

Methodology for Flatband Voltage Measurement in Fully Depleted Floating-Body FinFETs
Ferain, I.; Pantisano, L.; O'Sullivan, B. J.; Singanamalla, Page(s): 1657-1663

RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon Substrate Lederer, D.; Raskin, J.-P. , Page(s): 1664-1671

A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization
Sonoda, K.; Sakai, A.; Moniwa, M.; Ishikawa, K.;  Page(s): 1672-1681

An Analytical Gate Tunneling Current Model for MOSFETs Having Ultrathin Gate Oxides
Mondal, I.; Dutta, A. K. , Page(s): 1682-1692

Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs Schroter, M.; Krause, J.; Lehmann, S.; Celi, D. , Page(s): 1693-1701

Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI  Kajiwara, K.; Nakajima, Y.;  Page(s): 1702-1707

Improving the Retention and Endurance Characteristics of Charge-Trapping Memory by Using Double Quantum Barriers Lin, S. H.; Yang, H. J.; Chen, W. B.; Page(s): 1708-1713

On the Suitability of a High- $k$ Gate Dielectric in Nanoscale FinFET CMOS Technology
Agrawal, S.; Fossum, J. G. Page(s): 1714-1719

A Fully Three-Dimensional Atomistic Quantum Mechanical Study on Random Dopant-Induced Effects in 25-nm Jiang, X.-W.; Deng, H.-X.; Luo, J.-W.; Li, Page(s): 1720-1726

Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip Applications Bijumon, P. V.; Page(s): 1727-1732

Investigation of Thermal Crosstalk Between SOI FETs by the Subthreshold Sensing Technique Shamsa, M.; Solomon, P. M.; Jenkins, K. A.; Balandin, A. Page(s): 1733-1740

Numerical Study of Flicker Noise in p- Heterostructure MOSFETs
Chen, C.-Y.; Liu, Y.; Dutton, R. W.; Sato-Iwanaga, J.; Inoue, A.; Page(s): 1741-1748

Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET Devices Li, M.; Crellin, A.; Ho, I.; Wang, Q. , Page(s): 1749-1755

New High-Voltage ( $>$ 1200 V) MOSFET With the Charge Trenches on Partial SOI

Luo, X.; Zhang, B.; Li, Z. , Page(s): 1756-1761

Time Response of Two-Dimensional Gas-Based Vertical Field Metal–Semiconductor–Metal Photodetectors Zhao, X.; Currie, M.; Cola, A.; Quaranta, F.; Page(s): 1762-1770

Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes Yang, Y.; Cao, X. A.; Yan, C. Page(s): 1771-1775

A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors
Meixner, R. M.; Gobel, H. H.; Qiu, H.; Ucurum, C.; Page(s): 17 76-1781

Effects of Switching Parameters on Resistive Switching Behaviors of Polycrystalline -Based Metal–Oxide–Metal Structure spark, J.-W.; Yang, M. K.; Jung, Page(s): 1782-1786

Special issue of IEEE Transaction on Electron Devices on SolidState
Page(s): 1787-1787

Electron Devices Society Administrative Committee, Page(s): 1788-1788

IEEE Transactions on Electron Devices information for authors Page(s): C3-C3

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